FEI Helios G4 CX
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Specifications:
Electron optics
- HT: 0.2 ÷ 30 kV
- Beam current 0.8 pA ÷ 22 nA
- Resolution: 0.8 nm@15 kV, 1.4 nm@1 kV
Ion optics
- HT: 0.1 ÷ 30 KV
- Beam current 0.1 pA ÷ 65 nA
- Resolution: 4.0 nm@30 kV
Key features:
- Schottky FEG
- Independent Pt and carbon GIS
- EasyLift EX NanoManipulator
(Fully integrated with the user interface ensuring fast movements, precision and high stability) - Retractable STEM detector
(Imaging of TEM transparent specimens) - Wide range of sample holders (including 4” wafer sample holder)
- Stage Navigation system
- Charge neutralizer
- iFast (user created recipes)
- RAPID (Remote Access Program for Interactive Diagnostics)
- Auto Slice & View
Applications:
- Target sample preparation: Etching/milling, Pt/carbon deposition, In-situ sample transfer
- Imaging (including slice and view)
- Spectroscopy & Diffraction (EDX/EBSD)