Focused Ion Beam

 

FEI Helios G4 CX

 Specifications:

Electron optics

  • HT: 0.2 ÷ 30 kV
  • Beam current 0.8 pA ÷ 22 nA
  • Resolution: 0.8 nm@15 kV, 1.4 nm@1 kV

Ion optics

  • HT: 0.1 ÷ 30 KV
  • Beam current 0.1 pA ÷ 65 nA
  • Resolution: 4.0 nm@30 kV

 

Key features:

  • Schottky FEG
  • Independent Pt and carbon GIS
  • EasyLift EX NanoManipulator
    (Fully integrated with the user interface ensuring fast movements, precision and high stability)
  • Retractable STEM detector
    (Imaging of TEM transparent specimens)
  • Wide range of sample holders (including 4” wafer sample holder)
  • Stage Navigation system
  • Charge neutralizer
  • iFast (user created recipes)
  • RAPID (Remote Access Program for Interactive Diagnostics)
  • Auto Slice & View

Applications:

  • Target sample preparation: Etching/milling, Pt/carbon deposition, In-situ sample transfer
  • Imaging (including slice and view)
  • Spectroscopy & Diffraction (EDX/EBSD)